 |
 |
 |
 |
 |
| 182 |
[US Patent Issued] US10224087 |
admin |
2019-03-18 |
2481 |
The following patent has been issued as US patent.
Patent number : US10,224,087
Title: Sensing voltage based on a supply voltage applied to magnetoresistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells
Inventors : S.-O. Jung, S. Choi, H. K. Ahn, S. H. Kang, S. Kim
Congratulations! |
|
