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[US Patent Issued] US9111635 |
admin |
2015-08-18 |
2481 |
The following patent has been issued as US patent.
Patent number: US9111635
Title: Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methods
Inventors: Seong-Ook Jung, Younghwi Yang, Bin Yang, Zhongze Wang, Choh Fei Yeap
Congratulations! |
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