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[US Patent Issued] US9865330 |
admin |
2018-03-02 |
2480 |
The following patent has been issued as US patent.
Patent number : US9,871,447
Title: Stable SRAM bitcell design utilizing independent gate FinFET
Inventors : Seong-Ook Jung, Mingu Kang, Hyunkook Park, Seung-Chul Song, Mohamed Abu-Rahma, Beom-Mo Han, Lixin Ge, Zhongze Wang
Congratulations! |
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