160 [US Patent Issued] US9865330 admin 2018-03-02 2480
The following patent has been issued as US patent.

Patent number : US9,871,447
Title: Stable SRAM bitcell design utilizing independent gate FinFET
Inventors : Seong-Ook Jung, Mingu Kang, Hyunkook Park, Seung-Chul Song, Mohamed Abu-Rahma, Beom-Mo Han, Lixin Ge, Zhongze Wang

Congratulations!