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[US Patent Issued] US9691462 |
admin |
2018-01-08 |
2476 |
The following patent has been issued as US patent.
Patent number : US9,691,462
Title: Latch offset cancelation for magnetoresistive random access memory
Inventors : Seong-Ook Jung, Taehui Na, Byun Kyu Song, Jung Pill Kim, Seung Hyuk Kang
Congratulations! |
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