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[US Patent Issued] US9583178 |
admin |
2017-03-26 |
2477 |
The following patent has been issued as US patent.
Patent number : US9583178
Title: SRAM read preferred bit cell with write assist circuit
Inventors : Seong-Ook Jung, Younghwi Yang, Bin Yang, and Choh Fei Yeap
Congratulations! |
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