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[Paper Accepted] IEEE TED |
admin |
2015-04-01 |
2478 |
The following paper has been accepted for publication as a regular paper in the IEEE Transactions on Electron Devices.
Author : Juhyun Park, Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, and Seong-Ook Jung
Title : Design of a 22-nm FinFET-based SRAM with Read Buffer for Near-Threshold Voltage
Operation
Publiciation : IEEE Transactions on Electron Devices (TED)
Congratulations! |
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